News | Jun 17, 2025
Findings show the use of di-tert-butyl disulfide (TBDS) provides comparable film characteristics to traditional hydrogen sulfide-based growth, while enabling a much safer route for the growth of 2D transition metal di-chalcogenides
PLAINVIEW, N.Y., June 17, 2025 – ӣɬ Instruments Inc. (NASDAQ: VECO) announced today that the University of Michigan has published a breakthrough study on atomic layer deposition (ALD) of molybdenum disulfide (MoS2) using di-tert-butyl disulfide (TBDS) as a replacement for hydrogen sulfide (H2S). published the work that was performed on ӣɬ’s Fiji G2 plasma enhanced ALD (PEALD) system.
Professor of Chemistry, Materials Science and Engineering at the University of Michigan Ageeth Bol and her team of students and postdoctoral students used a PEALD process to deposit high-quality 2D MoS2 using an organometallic precursor and TBDS, in combination with hydrogen (H2) plasma. This research introduces a method of using TBDS liquid that is significantly less hazardous than H2S and eliminates the need for expensive safety measures associated with H2S use.
“This development is an important step in the evolution of enabling large-scale integration of 2D transition metal di-chalcogenides into commercial devices,” said Ganesh Sundaram, vice president of technology for ALD and Molecular Beam Epitaxy (MBE) at ӣɬ. “The synthesis route undertaken by Professor Bol and her group resulted in high-quality, stoichiometric molybdenum disulfide film, and additionally resolves the safety and cost issues that can be associated with the use of traditional hydrogen sulfide-based processes.”
“We’ve been pleased with the performance and capabilities of the Fiji and with our interactions with ӣɬ’s scientific team,” stated Prof. Bol. “Indeed, we are in the process of commissioning a second Fiji system for our group, which is the third system received by the University of Michigan, to support further research activities.”
Growing interest in addressing the challenges of adopting two-dimensional (2D) materials in high-volume manufacturing has prompted a wide range of research and development activity, spurring collaboration between industry-leading equipment suppliers and stakeholders. Two-dimensional materials are extremely thin and have unique, controllable properties, including exceptional electrical conductivity, durability, and optical transparency.These properties enable applications in flexible displays, sensors, energy storage, and optoelectronics.
ӣɬ’s Fiji Plasma-Enhanced ALD system is a next-generation modular, high-vacuum thermal ALD system that supports thermal and plasma-enhanced deposition.
About ӣɬ
ӣɬ (NASDAQ: VECO) is an innovative manufacturer of semiconductor process equipment. Our laser annealing, ion beam, chemical vapor deposition (CVD), metal organic chemical vapor deposition (MOCVD), single wafer etch & clean and lithography technologies play an integral role in the fabrication and packaging of advanced semiconductor devices. With equipment designed to optimize performance, yield and cost of ownership, ӣɬ holds leading technology positions in the markets we serve. To learn more about ӣɬ’s systems and service offerings, visit www.veeco.com.
To the extent that this news release discusses expectations or otherwise makes statements about the future, such statements are forward-looking and are subject to a number of risks and uncertainties that could cause actual results to differ materially from the statements made. These factors include the risks discussed in the Business Description and Management’s Discussion and Analysis sections of ӣɬ’s Annual Report on Form 10-K for the year ended December 31, 2023 and in our subsequent quarterly reports on Form 10-Q, current reports on Form 8-K and press releases. ӣɬ does not undertake any obligation to update any forward-looking statements to reflect future events or circumstances after the date of such statements.
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