Ó£ÌÒɬ¸£Àû¼§

EpiStride SiC CVD System

Introducing the EpiStride System for Silicon Carbide: A New Stride in SiC Epitaxy

Lower your Cost of Ownership with Ó£ÌÒɬ¸£Àû¼§â€™s New Silicon Carbide Epitaxy Technology

Ó£ÌÒɬ¸£Àû¼§â€™s latest technology for the compound semiconductor market enables high-performance chemical vapor deposition of Silicon Carbide for both 6 and 8-inch wafer production. The platform enables a return to production in under 5 hours after routine cleaning maintenance. The EpiStride system’s high uptimes, short cycle times and overall stable performance lead to the lowest cost of ownership per wafer compared to competitive systems.

Features and Benefits

• Single-wafer, cross-flow, hot-wall chemical vapor deposition (CVD) system for Silicon Carbide epitaxy
• Capable of processing wafers of any size up to 200 mm
• Available in single- or dual-chamber configurations

Ensuring the Highest Epitaxial Quality

• The EpiStride system can grow epi layers of standard 10-15 um thickness with thickness uniformities well below 1% and doping uniformities below 2%
• This performance is achieved repeatably throughout a campaign cycle in-between routine cleaning and maintenance operations

Providing Unmatched Ease-of-Use

• Only system to complete routine cleaning maintenance in < 5 hours (green-to-green time), out of which human-touch-time is < 1 hour
• Routine cleaning maintenance is performed in an inert environment through a glovebox with easy access to the reactor
• The glovebox allows for a quick exchange of parts without complex and time-consuming disconnection of hardware components
• Upon maintenance completion, the EpiStride system quickly achieves baseline performance with no need for further hardware or software tuning

Routine cleaning maintenance is performed in an inert environment through a glovebox with easy access to the reactor